2N5210 Transistor Pinout, Features, Equivalents, Applications, Characteristics and Other Details
2N5210 is an NPN Bipolar junction Transistor or BJT. It is available in TO-92 package. It is a high gain and low noise transistor. In this post, we are going to explore 2N5210 transistor pinout, features, equivalents, applications, characteristics, and other details.
Features / Technical Specifications:
- Package Type: TO-92
- Transistor Type: NPN
- Max Collector Current(IC): 50mA
- Max Collector-Emitter Voltage (VCE): 50V
- Max Collector-Base Voltage (VCB): 50V
- Max Emitter-Base Voltage (VBE): 5V (Some manufacturers also has 4V)
- Max Collector Dissipation (Pc): 625 mW
- Max Transition Frequency (fT): 30 MHz
- Minimum & Maximum DC Current Gain (hFE): 200 to 600
- Max Storage, Operating & Junction temperature range: -55 to +150 Centigrade
Replacement and Equivalent:
2N5088, 2N5089, SS9014, MPS650, MPS6602, 2SC1841, KSC9452SC3069, 2SC3112, BCX38, ECG199, STX112, TIPK110, MPSW05, MPSW06, KTC9014, MPS651, MPSA05 (The pin configuration of these equivalent transistors can be different, therefore it is recomended to check pin configuration of the transistor you are using as a replacement)
2N5210 Transistors Explained / Description:
2N5210 is a general purpose transistor available in TO-92 package. It is basically designed to use amplifier applications. But it is not limited to only these applications and can also be used for switching and different types of signal amplification. Two of the main features of the transistor are its high DC current gain that is upto 600 and its low noise capabilities which makes it ideal to use in variety of audio amplification, preamplification and variety of other low level electronic signal amplification circuits.
Looking at the specs of the transistor the maximum collector to emitter voltage of the transistor is 50Vdc, the max collector to base voltage is also 50Vdc, max emitter to base voltage is 5V, max continuous collector current is 50mA, max transition frequency is 30MHz, minimum to maximum noise figure is 2.0 to 3.0dB, collector to base capacitance is 4.0 and the total device dissipation is 625 milliwatts.
A nearest variant of the transistor is 2N5209 that is from the same series of the 2N5210 and it is almost identical to it. But it has few differences such as max DC current gain is 300 but it has high maximum noise figure of 4.0.
Where We Can Use it & How to Use:
As mentioned above the transistor has quite good DC current gain and noise figure which makes it a good choice to use in circuits in which there is a requirements of a transistor which is capable to amplify any type of weak electronic signals for example audio or other electronic signals. Moreover it can also be used as a switch for driving small loads under 50mA.
Applications:
Audio preamplifiers
Audio amplifiers
Sensor Circuits
Low Level Signal Amplification
Oscillators
Switching loads under 50mA
Safe Operating Guidelines / Absolute Maximum Ratings:
To safely operate this transistor follow the below safe operating guidelines when using this transistor in your circuit or design.
- Always operate the transistor 20% below from its absolute maximum ratings.
- The max continuous collector current is 50mA therefore do not drive load of more than 40mA.
- The max collector to emitter voltage is 50V, so the derived load should not be more than 40V.
- The storage or operating temperature of the transistor should be under -55°C to +150 °C.
Datasheet:
To Download the datasheet just copy and paste the below link in your browser.
https://z3d9b7u8.stackpathcdn.com/pdf-down/2/N/5/2N5209-Motorola.pdf
